Control of crystalline quality of MOVPE-grown GaN

JournalofCrystalGrowth221(2000)327}333

S.Yamaguchi *,M.Kariya ,S.Nitta ,T.Kashima ,M.Kosaki ,Y.Yukawa ,

H.Amano ,I.Akasaki

High-TechResearchCenter,MeijoUniversity,1-501Shiogamaguchi,Tempaku-ku,Nagoya468-8502,Japan

DepartmentofElectricalandElectronicEngineering,MeijoUniversity,1-501Shiogamaguchi,Tempaku-ku,Nagoya468-8502,Japan DepartmentofMaterialsScienceandEngineering,MeijoUniversity,1-501Shiogamaguchi,Tempaku-ku,Nagoya468-8502,Japan

ControlofcrystallinequalityofMOVPE-grownGaN

and(Al,Ga)N/AlGaNMQWusingIn-doping

and/orNcarriergas

Abstract

Thee!ectsofisoelectronicIn-dopingonthestructuralandopticalpropertiesofGaN,GaN/AlGaNand

AlGaN/AlGaNquantumwells(QWs)onGaNwereinvestigated.QWsweregrownbyatmospheric

pressuremetalorganicvapor-phaseepitaxywitheitherHorNcarriergas.WithoutIn-doping,QWsgrownin

NcarriergashadmuchhighercrystallineandopticalpropertiesthanthosegrowninHcarriergas.X-raydi!raction

andphotoluminescencestudieshaverevealedthatIn-dopingimprovesthecrystallineandopticalpropertiesofQWs,regardlessofthecarriergasspeciesusedduringgrowth.TheseimprovementsaremoreremarkableforIn-dopingintothewelllayersratherthanintothebarrierlayers. 2000ElsevierScienceB.V.Allrightsreserved.

PACS:61.72;78.20

Keywords:GaN;AlGaN;Quantumwells;IsoelectronicIn-doping;X-raydi!raction

1.Introduction

Alow-temperature-depositedbu!erlayer(LT-BL)playsasigni"cantroleinthegrowthofgroupIIInitridesemiconductorsonasapphiresubstrate[1].TheuseofaLT-BLofeitherAlNorGaNenablesthegrowthofhigh-quality"lmswithsmoothsurfaces,althoughthelatticeconstantsandthermalexpansioncoe$cientsofthenitridesand

*Correspondingauthor.Tel.:#81-52-832-1151;fax:#81-52-832-1244.

E-mailaddress:syamagu@meijo-u.ac.jp(S.

Control of crystalline quality of MOVPE-grown GaN

Control of crystalline quality of MOVPE-grown GaN

Yamaguchi).sapphiredi!ersigni"cantly.Sincethediscoveryofthistechnique,thecontrolofelectricalconductiv-ity,inparticular,theachievementofp-type"lms[2,3],andtheestablishmentofthegrowthofhet-erostructureandquantumwells(QWs)[4,5],havebeenrapidlydeveloped.Nowadays,high-bright-nessblueandgreenlight-emittingdiodesandvioletlaserdiodeshavebeenrealizedusingtheLT-BLtechnique.However,high-densitythreadingdislo-cations(TDs)oftheorderof10 }10 cm\ stillexistintheGaN"lmgrownonsapphirewithLT-BL,whicha!ectvariouspropertiesofthenitride-baseddevices.

0022-0248/00/$-seefrontmatter 2000ElsevierScienceB.V.Allrightsreserved.PII:S0022-0248(00)00708-9

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