MOS FET Relays

Technical Information

Introduction

New models with a wider range of characteristics provide an array ofsolutions, meeting the needs of today’s high performance applications.Our expanded range of MOS FET relays, Type G3VM, sets thebenchmark in Solid State Relays (SSRs). Products are manufacturedusing the latest advances in automated production and include avariety of improved construction technologies within the areas of theinput LED, PDA (Photo Diode Array used as a photocoupler) andMOS FET chips used in the load switching circuit. As a result, furtherreductions in package size and power requirements have beenachieved.

Combining the advantages of mechanical and solid state technology,the new G3VM range gives you unprecedented capability to design.All models featured include a double MOS FET load circuit, enablingthe designer complete versatility since it makes no differencewhether an AC or DC load in either direction is connected (Connec-tion A). Thus, the MOS FET relay is a fully functional alternative to anelectromechanical relay with minimal additional drive circuitry.

The built-in Current Limit Function (CLR models) has many uses.Traditionally used to clamp excessive over current fault conditions intelecom equipment, this feature can also be used to good effect toresist transient and short circuit conditions.

MOS FET relays are the ideal data and telecommunication solutionfor line seizing, line switching, hook switching, Data Access Arrange-ment (DAA) function, line transformer circuit control and other featurephone functions. Central office applications require high reliabilityand long life. Here the G3VM is ideal for use in the areas of Sub-scriber Line Interfaces (SLICs) Multiplexers and Routers. In addition,Local Area Networks (LANs) and Network Termination Units (NTUs)including Set-Top Boxes (STBs) and Remote Metering Systems(RMS) can take advantage of the G3VMs’ small size and low ONresistance.

Advances in performance and cost reduction enable MOS FETrelays to be considered as good alternatives to Reed Relays in appli-cation areas such as security motion detectors (standard and anti-mask PIRs), and Automated Test Equipment (ATE) probe cards.

Glossary

Term

Repetitive peak LED forward current

LED forward current reduction rate

Connection temperature

Continuous load current ON current reduction rateDielectric strength between input and output

Storage temperature LED forward voltage Capacity between (LED) terminals

Maximum resistance with output ON

Current leakage when the relay is open

Output CapacitanceCapacity between I/O terminals

Turn-ON timeRecommended Load Voltage (AC peak / DC)

SymbolFIFP<IF/°CRTJOFFIO<ION/°CVI-OaTstgVFRCTFTRONILEAKCoffCI-OI-OtONOFFVDD

Description

Rated current that can flow momentarily in the forward direction of the LED

Rated change of forward current flowing through the LED relative to ambient temperature above 25°C Rated temperature that can be allowed in the junction of the LED, Photodetector or MOS FET(s) Rated current that can flow between the MOS FET's output terminals in the ON state

Rated change of load current flowing between MOS FET(s) output terminals relative to ambient tem-perature above 25°C

Isolation voltage between input and output terminals for a specified time

Ambient temperature range in which the relay may be stored while not operating Voltage drop between the LED's anode and cathode at a certain forward current

Electrostatic capacitance between the anode and the cathode terminals of the LED

Resistance between the MOS FET's output terminals specified with reference to ON state current Leakage current flowing between the MOS FET's output terminals in the OFF stateElectrostatic capacitance between the output terminals in the OFF state

Electrostatic capacitance between the input and output terminals of the relay

Time required for the output waveform to change from 0 (100%) to 90 (10%) after input goes from OFF to ON state

to OFF state

Rated load voltage that can be applied between the MOS FET's output terminals

MOS FET Relays Technical Information

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