SI7478DP-T1-GE3;中文规格书,Datasheet资料
Si7478DP
Vishay Siliconix
N-Channel 60-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)60
RDS(on) (Ω)0.0075 at VGS
= 10 V 0.0088 at VGS = 4.5 V
ID (A)2018.5
FEATURES
Halogen-free According to IEC 61249-2-21
Available
TrenchFET® Power MOSFET
New Low Thermal Resistance PowerPAK®
Package with Low 1.07 mm Profile 100 % Rg Tested
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Drain-Source Voltage Gate-Source Voltage
Continuous Drain Current (TJ = 150°C)a
Maximum Power Dissipationa
AAAASymbol VDSVGS
IDDMSASASPDJstg
10 s
Steady State 60± 20
W°C
AUnit V
THERMAL RESISTANCE RATINGS
ypicalMaximumt ≤ 10 s1823
RthJAMaximum Junction-to-Ambienta
Steady State5265°C/W
RthJC1.01.3Maximum Junction-to-Case (Drain)Steady StateNotes:
a.Surface Mounted on 1" x 1" FR4 board.
b.See Solder Profile ( ). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is notrequired to ensure adequate bottom side solder interconnection.
c.Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
Document Number: 72913S09-0271-Rev. D, 16-Feb-09www.wendangwang.com
1
你可能喜欢
- SM16703P规格书
- GT30L32S4W规格书V1.1I_A
- AD009-01TS规格书
- DP1838规格书
- 合作生产经营协议书(标准)5页
- GT30L32S4W规格书V1.1I_A31页
- 合作经营协议书范本(标准)2页
- DZ23C27贴片二极管规格书3页
- 生鲜电商商业计划书(标准)47页
- BLM18RK102SN1磁珠规格书5页
- 艾华铝电解规格书48页
- AD009-01TS规格书4页
- 铅酸充电器规格书2页
- 生益无胶材规格书2页
- i9000A产品规格书2页
- 策划书的标准格式2页
