BUK9512-55B,127;中文规格书,Datasheet资料
BUK9512-55B
N-channel TrenchMOS logic level FET
Rev. 02 — 8 June 2010
Product data sheet
1.Product profile
1.1General description
Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.
1.2Features and benefits
Low conduction losses due to low Suitable for logic level gate drive on-state resistancesources Q101 compliant
Suitable for thermally demanding environments due to 175 °C rating
1.3Applications
12 V and 24 V loads General purpose power switching Automotive systems
Motors, lamps and solenoids
1.4Quick reference data
Table 1.Quick reference dataSymbolParameterConditions
MinTypMaxUnitVDSdrain-source Tj≥25°C; Tj≤175°C--55VvoltageIDdrain currentVGS=5V;Tmb=25°C;[1]
--75Asee Figure 3; see Figure 1Ptot
total power Tmb=25°C; see Figure 2
-
-
157
W
dissipationStatic characteristicsRDSon
drain-source VGS=10V; ID=25A; -9
10
m on-state Tj=25°C
resistance
VGS=5V;ID=25A; -10.212
m
Tj=25°C;
see Figure 11; see Figure 12
